Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge report having grown cubic GaN on 3C-SiC (silicon carbide) wafers using MOCVD. Anvil produced the underlying 3C-SiC layers using the company's patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers. Anvil contends that the process can work with 150mm diameter wafers and possibly beyond without modification and is therefore suitable for industrial-scale applications. In a project funded by Innovate UK, the MOCVD growth trials at Cambridge resulted in single phase, cubic GaN. The layers, characterized by XRD, TEM, photoluminescence and AFM, have potential for LED applications.
According to the researchers, the cubic GaN may be able to remove the strong internal electric fields, which plague conventional green LEDs, impair recombination, and make it difficult to address high internal quantum efficiency (IQE). Also, the researchers note that cubic GaN has a narrower bandgap and improved p-type electrical properties compared to the conventional hexagonal GaN phase used for LEDs. Therefore, a commercializable process to produce cubic GaN on large diameter silicon wafers may help increase the efficiency and reduce the cost of LED lighting.
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